B-Doped Q-Carbon Superconductors...

FIG. 1.
SIMS profiles of (a) as-deposited boron and carbon layers with the inset showing a schematic of the alternating layers of amorphous carbon and boron deposited on c-sapphire using the pulsed laser deposition technique and (b) pulsed laser annealed (B-doped Q-carbon) thin films with the inset showing a schematic of B-doped amorphous Q-carbon formed on c-sapphire.

Topics: Condensed Matter Physics, Materials Science, Solid State Physics, Superconductors

ABSTRACT

Following a brief report on high-temperature superconductivity in B-doped Q-carbon [Bhaumik et al., ACS Nano 11(6), 5351–5357 (2017)], we present detailed structure-property correlations to understand the origin of superconductivity in strongly bonded lightweight materials and methods to further enhance the superconducting transition temperature (T_c). Nanosecond melting of carbon in a super undercooled state and rapid quenching result in a strongly bonded unique phase of B-doped Q-carbon. The temperature-dependent resistivity and magnetic susceptibility measurements demonstrate type II superconductivity in this material with a transition temperature of 36.0 ± 0.5 K and an upper critical field of 5.4 T at ∼0 K. It has also been shown that in B-doped Q-carbon, the upper critical magnetic field (H_c2(T)) follows H_c2(0) [1-(T/Tc)^2.1] temperature dependence and is consistent with the Bardeen–Cooper–Schrieffer formalism. In the present study, B-doped Q-carbon thin films are formed on sapphire substrates by employing pulsed laser annealing (PLA) using a nanosecond excimer laser. This process involves the rapid quenching of highly undercooled melt of homogenously mixed B and C. Through the structure-property correlation measurements in B-doped Q-carbon, we estimate a higher electronic density of states near the Fermi level. Higher density of states near the Fermi-level along with higher Debye temperature and phonon frequency are responsible for the enhanced T_c. As a result of rapid melting and quenching, we can achieve 17.0 ± 1.0 or higher atomic % of B in the electrically active sites of Q-carbon which leads to the formation of shallow electronic states near the valence band maximum. From the critical current density versus field moments, the value of critical current density (J_c (2T)) in B-doped Q-carbon at 21 K is calculated as 4.3 × 10⁷ A cm⁻², which indicates that this novel material can be used for the persistent mode of operation in MRI and nuclear magnetic resonance applications. This discovery of high-temperature superconductivity in B-doped amorphous Q-carbon shows that the non-equilibrium synthesis technique using the super undercooling process can be used to fabricate materials with greatly enhanced physical properties.

A novel high-temperature carbon-based superconductor: B-doped Q-carbon
Anagh Bhaumik¹, Ritesh Sachan^1,2, and Jagdish Narayan^1,a)
Journal of Applied Physics 122, 045301 (2017); doi: http://dx.doi.org/10.1063/1.4994787