|Slide 4 of 50 on Slide Player, Rainer Waser*|
A novel type of computer memory could, in theory, let you to store tens or even hundreds of times as much data on your smartphone. Researchers at Rice University have demonstrated a more practical way to manufacture it.
The type of memory in question, resistive random access memory (RRAM), is being developed by several companies, but fabrication usually requires high-temperatures or voltages, making production difficult and expensive. The Rice researchers have shown a way to make RRAM at room temperature and with far lower voltages.
Like flash memory, RRAM can store data without a constant supply of power. Whereas flash memory stores bits of information in the form of charge in transistors, RRAM stores bits using resistance. Each bit requires less space, increasing the amount of information that can be stored in a given area.
MIT Technology Review: Super-Dense Computer Memory, Kevin Bullis
* Rainer Waser JARA-FIT @ FZJ Forschungszentrum Jülich & RWTH Aachen University Outline Forschungszentrum Jülich Center of Nanoelectronic Systems for Information Technology Scaling Projections for Resistive Switching Memories
Tomorrow: Fromm and Roddenberry